}

Supply Of N-Type Silicon Wafers With Wet Thermal Oxide On Both Sides, Specifications :- Prime Grade 4-Inch Silicon <100> Wafers N-Type, As Doped Thickness 500-550Um Resitivity Less Than 0.005 Ohm-Cm One Side Polished Thermal Oxide On Both Sides Oxide Lay-Maharashtra

Government Departments has published Supply Of N-Type Silicon Wafers With Wet Thermal Oxide On Both Sides, Specifications :- Prime Grade 4-Inch Silicon <100> Wafers N-Type, As Doped Thickness 500-550Um Resitivity Less Than 0.005 Ohm-Cm One Side Polished Thermal Oxide On Both Sides Oxide Lay. Submission Date for this Tender is 27-03-2014. As Doped Thickness 500-550Um Resitivity Less Than 0.005 Ohm-Cm One Side Polished Thermal Oxide On Both Sides Oxide Layer Thickness 250-300 Nm Tenders in Maharashtra. Bidders can get complete Tender details and download the document.




Tender Notice

5800096
Supply Of N-Type Silicon Wafers With Wet Thermal Oxide On Both Sides, Specifications :- Prime Grade 4-Inch Silicon <100> Wafers N-Type, As Doped Thickness 500-550Um Resitivity Less Than 0.005 Ohm-Cm One Side Polished Thermal Oxide On Both Sides Oxide Lay
Open Tender
Indian
Maharashtra
27-03-2014

Tender Details

Supply Of N-Type Silicon Wafers With Wet Thermal Oxide On Both Sides, Specifications :- Prime Grade 4-Inch Silicon <100> Wafers N-Type, As Doped Thickness 500-550Um Resitivity Less Than 0.005 Ohm-Cm One Side Polished Thermal Oxide On Both Sides Oxide Layer Thickness 250-300 Nm

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