Supply Of Thermal Oxide Wafer: 50 Nm Sio2 Layer On Si(100), 4 Dia X 0.5 Mm T, Undoped,R:>1000Ohm.Cm, Si Wafer (100), 4 Dia X 0.5 Mm, 1Sp, Undoped With Resistivities: >1,000 Ohm-Cm, And Gaas Wafer , Growing Method: Vgf ,(100)Undoped Semi-Insulated 100M, Hyderabad-Andhra Pradesh

Local Bodies has published Supply Of Thermal Oxide Wafer: 50 Nm Sio2 Layer On Si(100), 4 Dia X 0.5 Mm T, Undoped,R:>1000Ohm.Cm, Si Wafer (100), 4 Dia X 0.5 Mm, 1Sp, Undoped With Resistivities: >1,000 Ohm-Cm, And Gaas Wafer , Growing Method: Vgf ,(100)Undoped Semi-Insulated 100M. Submission Date for this Tender is 17-03-2014. Undoped Tenders in Hyderabad Andhra Pradesh. Bidders can get complete Tender details and download the document.

Tender Notice

TDR

5798281

Tendering Authority

Tender Brief

Supply Of Thermal Oxide Wafer: 50 Nm Sio2 Layer On Si(100), 4 Dia X 0.5 Mm T, Undoped,R:>1000Ohm.Cm, Si Wafer (100), 4 Dia X 0.5 Mm, 1Sp, Undoped With Resistivities: >1,000 Ohm-Cm, And Gaas Wafer , Growing Method: Vgf ,(100)Undoped Semi-Insulated 100M

Bidding Type

Open Tender

Competition Type

Indian

State

Andhra Pradesh

City

Hyderabad

Last Date of Bid Submission

17-03-2014

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Supply Of Thermal Oxide Wafer: 50 Nm Sio2 Layer On Si(100), 4 Dia X 0.5 Mm T, Undoped,R:>1000Ohm.Cm, Si Wafer (100), 4 Dia X 0.5 Mm, 1Sp, Undoped With Resistivities: >1,000 Ohm-Cm, And Gaas Wafer , Growing Method: Vgf ,(100)Undoped Semi-Insulated 100M, Hyderabad-Andhra Pradesh

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Supply Of Thermal Oxide Wafer: 50 Nm Sio2 Layer On Si(100), 4 Dia X 0.5 Mm T, Undoped,R:>1000Ohm.Cm, Si Wafer (100), 4 Dia X 0.5 Mm, 1Sp, Undoped With Resistivities: >1,000 Ohm-Cm, And Gaas Wafer , Growing Method: Vgf ,(100)Undoped Semi-Insulated 100M, Hyderabad-Andhra Pradesh

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