Tender For Sputtering Targets And Metal Wires Etc., pilani-Rajasthan

Tender For Sputtering Targets And Metal Wires Etc.; 1. Sputtering Targets 1. Gold ( Au ) ( 3” & 4” Diameter, With Cu Back Plate; Au Thickness 2Mm / 3Mm; 99.99% Purity Or Better, Back Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 2. Titanium Nitride ( Tin ) ( 3” & 4” Diameter, With Cu Back Plate; Back Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) 3. Chromium ( Cr ) ( 3” & 4” Diameter; With And Without Cu Back Plate Both; Back Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 4. Platinum ( Pt ) ( 3” & 4” Diameter, With Cu Back Plate; Pt Thickness 3Mm; 99.999% Purity; Black Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 5. Aluminium Nitride ( Ain ) ( 3” & 4” Diameter; With Cu Back Plate; Back Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 6. Aluminium ( Al ) ( 3” & 4” Diameter; With And Without Cu Back Plate Both; Black Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 7. Aluminium With 1% Silicon ( All%Si ) ( 3” & 4” Diameter; With Cu Back Plate Both; Back Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 8. Titanium ( Ti ) ( 3” & 4” Diameter; Overall Thickness < 10Mm ) . 9. Titanium Oxide ( Tio2 ) ( 3” & 4” Diameter, With Cu Back Plate Both; Black Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 10. Silicon Dioxide ( Sio2 ) ( 3” & 4” Diameter; With Cu Back Plate Both; Black Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 11. Silicon Nitride ( Si3n4 ) ( 3” & 4” Diameter; With Cu Back Plae Both; Back Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . 12. Hafnium Oxide ( Hfo2 ) ( 3” & 4” Diameter, With Cu Back Plate Both; Black Plate Thickness 5 Mm; Overall Thickness < 10 Mm ) . Required For Regular Semiconductor / Mems Processes For Device Fabrication. 2. Metal Wires Gold Wire For E-Beam Deposition; 99.999% Or Better Purity. Required For Regular Semiconductor / Mems Processes For Device Fabrication. 3. Photoresists S1818, S1813, Su-8 ( Different Thicknesses ) . Fuji Film Hipr6517 Hc, Developer Mf-319, Developer Cd-26, Developer Fuji Film Opd4262, Hmds Primer, Pr Stripper, Lor 10A, Lor 5A, Pg Remover, Az 10Xt For Electroplating Mould Formation. Required For Regular Semiconductor / Mems Processes For Device Fabrication. 4. Etchants Cr, Au, Ti, Pt, Al, Dtin Required For Regular Semiconductor / Mems Processes For Device Fabrication. 5. Electro-Plating Solutions Au ( Sulphite Based ) , Cu, Ni, Ag Required For Regular Semiconductor / Mems Processes For Device Fabrication. 6. Rf Probes  Sub-Terahertz Frequency ( Up-To 150 Ghz ) Components Including, Rf Probes For Probe Station, Connector Cables From Vna To Rf Probes ( 1 – 15 M Length ) G-S-G Configuration, Calibration Substrates For On-Wafer Calibration.  Calibration Substrate: For Cv Measurement.  1-1.5 On Long Rf Cable From Vna To Rf Probes For Dc To 40 Ghz Frequency.  Rf Probes For Dc To 40 Ghz ( Gsg Configuration, With Spring For Soft Landing Or Soft Contact ) . Required For Testing Of Thz On-Wafer Devices. 7. Dc Probes & Tips  Dc Probes And Tips For High Power.  Triax Cable And Connector Till 100 Mhz Frequency.  Tee, Union And Other Bnc And Triax Connectors Up-To 100 Mhz.  Converter From Coaxial 4 Port To 2 Port Bnc Connector Up-To 100 Mhz. Required For High Power Testing And C-V Measurements.

Sr No	CorrigendumDate	Corrigendum	CorrigendumType	NewSubmissionDate
1	21-11-2023	Bid Auto Extn Corrigendum	Bid Auto Extn Corrigendum	28-11-2023

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