}
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    • Supply Of Insulated Gate Bipolar Transistorinsulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor ( Igbt ) Capable To Carry 100 Amps Dc Collector Current At Max.Rated Temperature And 1200V Collector-Emitter Voltage, Consisting Of 2 Igbts -Tamil Nadu

    Southern Railway has published Supply Of Insulated Gate Bipolar Transistorinsulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor ( Igbt ) Capable To Carry 100 Amps Dc Collector Current At Max.Rated Temperature And 1200V Collector-Emitter Voltage, Consisting Of 2 Igbts . Submission Date for this Tender is 18-06-2021. Medical Equipment Tenders in Tamil Nadu. Bidders can get complete Tender details and download the document.




    Tender Notice

    28105332
    Supply Of Insulated Gate Bipolar Transistorinsulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor ( Igbt ) Capable To Carry 100 Amps Dc Collector Current At Max.Rated Temperature And 1200V Collector-Emitter Voltage, Consisting Of 2 Igbts
    Open Tender
    Indian
    Tamil Nadu
    18-06-2021

    Tender Details

    Supply Of Insulated Gate Bipolar Transistorinsulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor ( Igbt ) Capable To Carry 100 Amps Dc Collector Current At Max.Rated Temperature And 1200V Collector-Emitter Voltage, Consisting Of 2 Igbts ( Dual Igbt Switches In Half Bridge Configration ) In A Single Module Of Size 94Mm X 34Mm X 30Mm Casing Semikron Make Model No. Skm100gb12t4 Or Littlefuse Make Model No. Mg17100s-Bn4mm Or Its Equivalent Model Of Eupec Or Mitshubishi Or Toshiba Makes. , Insulated Gate Bipolar Transistor ( Igbt ) Capable To Carry 75 Amps Dc Collector Current At Max.Rated Temperature And 1200V Collector-Emitter Voltage, Consisting Of 2 Igbts ( Dual Igbt Switches In Half Bridge Configuration ) In A Single Module Of Size 94Mm X 34Mm X 30Mm Casing Infineon Make Bsm75gb120dn2 Or Semikron Make Model No. Skm75gb12f4 Or Littlefuse Make Model No. Mg1775s-Bn4mm Or Its Equivalent Model Of Mitshubishi Or Toshiba Makes.

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