Tenders Are Invited For Diffraction Apparatus - Delivery Of A Set Of Two X -Ray Orientometers Designed Specifically For Measuring Substrates Or Volume Crystals Such As Gallium Nitride (Gan) Silicon Carbide (Sic) And Similar.

Diffraction Apparatus - Delivery Of A Set Of Two X -Ray Orientometers Designed Specifically For Measuring Substrates Or Volume Crystals, Such As Gallium Nitride (Gan), Silicon Carbide (Sic) And Similar.. Please Scroll Down For The English Version The Subject Of The Order Is: Delivery Of A Set Of Two Identical X -Rays Designed Specifically For Measuring Substrates Or Volume Crystals, Such As Gall Nitride (Gan), Silicon Carbon (Sic) And Similar. X -Ray Orientometer - Two Identical Devices. Requirements For X -Ray Orientometer: • X -Ray Orientometer Designed Specifically For Measuring Substrates Or Volume Crystals, Such As Gallium Nitride (Gan), Silicon Carbide (Sic) And Similar. • Dedicated Thermal Cooling Aggregate For An X -Ray Orientometer • Single Measurement For Processing Substrates Or Volume Crystals. • Possibility To Measure Substrates Or Volume Crystals Up To 110 Mm And A Maximum Weight Of 25 Kg. • Possibility To Measure A Flat Location In 4 Directions (Top, Bottom, Left, Right). • Possibility To Measure Various Orientations Of Substrates And Crystals. • Manual Measurement. • X -Ray Beam Position At A Distance Of 70 Mm From The Support Plate. • Accuracy: ± 0.02 ° • Repeatability: <0.02 ° • Bag Height From The Base (70 Mm) Measuring Area: - Dimensions Less Than: 1.8 M (Width) X 1.2 M (Depth) X 1.2 M (Height) - Weight: Less Than 500 Kg. Detailed Description Of The Subject Of The Contract Is Point 3 Swz English Version The Subject Of Delivery Of A Set Of Two X-Ray Orientometers Specifically Designed For Measuring Substrates Or Bulk Crystals Such As Gallium Nitride (Gan), Silicon Carbide (Sic) And The Like. X-Ray Orientomter-Two Identical Devices. Requirements For X-Ray Orientomter: • X-Ray Orientomter Designed Especily For Wafer Or Ingot Measuritions Such As Gallium Nitride (Gan), Silicon Carbide (Sic) And Similar. • Dedicated Thermal Cooling Unit For X-Ray Orientomter. • Single Measurement To Process Waferts Or Wots One At Time. • Capable To Measure Wafer Or Ingot Up To 110Mm And Maximum Weight 25Kg. • Capable To Measure Flat Position In 4 Directions (Up, Down, Left, Right). • Capable To Measure Different Wafer And Ingot Orientation. • Manual System Measurement. • X-Ray Beam Position At 70Mm Of The Carrier Plate. • Accury: ± 0.02 ° • Repeatability: <0.02 ° • Beam Height From Base (70 Mm) Footprint: • Footprint Less Than: 1.8M (W) X 1.2M (D) X 1.2M (H) Of The Subject Of The Order Can Be Found In Point 3 Of The Tor

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